Schottky Solar
ZnSnN2 Schottky barrier solar cells
The photoelectric conversion efficiency of these Schottky solar cells is smaller than that of ZnSnN 2 heterojunction solar cells (0.37 % for SnO-ZnSnN 2 [27] and the maximum is 1.54 % for SnO-Al 2 O 3-ZnSnN 2 [26]), due to the smaller short-circuit current density.
Schottky solar cell using few-layered transition metal …
Here, we show easy and scalable fabrication of a few-layered TMD solar cell using a Schottky-type configuration to obtain a …
Solution-processed silicon/SnCl2-treated Ti3C2Tx MXene Schottky junction solar …
Science China Materials - In this study, a novel photovoltaic cell based on the Ti3C2Tx MXene/n-type silicon (n-Si) Schottky junction is developed by a simple solution-processed method of... Contributions Author contributions Yao X participated in the design of this study, conducted the experiments, performed data analysis and drafted the …
Condensed Matter | Free Full-Text | Design and Optimization of …
This paper uses numerical modeling to describe the design and comprehensive analysis of cost-effective MXene/n-InP Schottky barrier solar cells. The proposed design utilizes Ti3C2Tx thin film, a 2D solution-processible MXene material, as a Schottky transparent conductive electrode (TCE). The simulation results suggest that these devices can …
Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High …
Solar-blind photodetectors have attracted extensive attention due to their advantages such as ultra-low background noise and all-weather. In this study, the planar Ti/Ga 2 O 3 /Au Schottky avalanche photodetector (APD) is fabricated based on β-Ga 2 O 3 epitaxial film on the sapphire substrate grown by metal–organic chemical vapor deposition. . The …
Long-term stability of graphene/c-Si Schottky-junction solar cells
In this study, graphene/Si Schottky-junction solar cells were produced, utilizing liquid-phase-exfoliated graphene as an active surface. The operational and interface stability of these solar cells over a period of 5 years in ambient conditions (following ISOS-D protocols: dark storage/shelf life) was examined, and the origin of their ...
Achieving high photovoltaic performance in graphene/AlGaAs/GaAs Schottky junction solar …
GaAs schottky junction solar cell with Ga-based hole reflector (HR) layers has been simulated. • PV Performance of GaAs solar cells without and with HR layers are investigated. • Performance enhancement of GaAs cell …
High-performance Schottky solar cells using ZrS2 nanobelt networks
A facile and effective approach to fabricate ZrS2 nanobelt network-embedded solar cells was represented by forming Schottky junctions between the contacts of ZrS2 nanobelts and metal Au electrodes. The solar cell devices showed a high short-circuit current Jsc of 21.8 mA cm−2 and a cell efficiency of 1.2%.
Large-Area, High-Specific-Power Schottky-Junction …
The deployment of two-dimensional (2D) materials for solar energy conversion requires scalable large-area devices. Here, we present the design, modeling, fabrication, and characterization of …
Schottky Solar Cells Based on Colloidal Nanocrystal Films
Schottky cell, the built-in potential is equivalent to the voltage at which the photocurrent (J Light-J Dark) becomes zero.10 Figure 3b shows that this occurs at 0.2 V, in accord with the Mott-Schottky results of Figure 3a. We deduced the location of the Schottky junction by comparing the EQE spectra from cells of different thickness.
Graphene-based Schottky junction solar cells
The Schottky junction, with merits of material universality, low cost and easy fabrication, is an alternative structure for solar cells. Compared to traditional indium-tin-oxide (ITO) based Schottky junction solar cells, graphene …
Schottky solar cells based on CsSnI3 thin-films
We describe a Schottky solar cell based on the perovskite semiconductor CsSnI 3 thin-film. The cell consists of a simple layer structure of indium-tin-oxide/CsSnI 3 …
Simulation and optimization of InGaN Schottky solar cells to …
An enhancement of the Schottky solar cell efficiency is highlighted in Fig. 11 (Left) after adding the graded layer which facilitates the passage of generated carriers because of the drastic reduction of the electric field at the n-InGaN/n-GaN interface about 5 × 10 5 V/cm (see Fig. 10).
Polycrystalline Zn3P2 Schottky barrier solar cells
Energy conversion efficiencies as high as 5.96% are reported on polycrystalline transparent magnesium Zn3P2 diodes, 0.7 cm2 in area, tested under simulated AM1 illumination. The transparent Mg films with low sheet resistivities are obtained by dc sputtering. The effective minority‐carrier diffusion length in Zn3P2 is estimated from …
Bypass-Dioden: Was steckt hinter den Verschattungsbrücken?
Die sogenannte Schottky-Diode funktioniert ähnlich wie ein Rückschlagventil. Die Solarunternehmen verbauen Schottky-Dioden als Bypass-Dioden, da sie den Stromfluss bereits bei geringen Spannungsabfällen unterbinden. Der Name der Diode stammt von dem deutschen Physiker und Elektrotechniker Walter Schottky.
Ga2O3 Schottky Avalanche Solar‐Blind ...
Solar-blind photodetectors have attracted extensive attention due to their advantages such as ultra-low background noise and all-weather. In this study, the planar Ti/Ga 2 O 3 /Au Schottky avalanche photodetector (APD) is fabricated based on β-Ga 2 O 3 epitaxial film on the sapphire substrate grown by metal–organic chemical vapor deposition. The Schottky …
High-performance Schottky solar cells using ZrS2 nanobelt networks
The transition metal dichalcogenide ZrS2 is an important semiconductor and should be a promising material in the optoelectronic field, however, its optoelectronic properties and applications have seldom been reported. In this paper, we synthesized single-crystalline ZrS2 nanobelts for interesting applications in solar cells. A facile and …
Self-Powered Vertical Schottky Junction Solar-blind …
Abstract: In this study, a Pt/ZnGa 2 O 4 /ITO vertical Schottky solar-blind photodetector was successfully accomplished by direct epitaxy high-quality ZnGa 2 O 4 thin film on the sputtered Pt metal film for the first time. It is clearly observed that ZnGa 2 O 4 film on Pt exhibited a narrow full width of half maxima of ~0.69° of X-ray diffraction peak, indicating …
Schottky solar cells based on CsSnI3 thin-films
The influence of light intensity on open-circuit voltage and short-circuit current supports the Schottky solar cell model. Additionally, the spectrally resolved short-circuit current was measured, confirming the unintentionally doped CsSnI3 is of p-type characteristics. The CsSnI3 thin-film was synthesized by alternately depositing layers of ...
Design and fabrication of graphene/CdS Schottky junction for photovoltaic solar …
Modeling of solar cell devices is done on PET substrates. Design and simulation are carried out for the device with structure graphene/CdS/PET, as shown in Fig. 1.The device output parameters such as open-circuit voltage (V OC), short circuit current density (J SC), fill factor (FF) and efficiency (% η) are calculated under AM 1.5 G …
InGaN based Schottky barrier solar cell: Study of the temperature ...
Considering this insight, platinum emerges as the most suitable metal contact for the development of InGaN-based Schottky solar cells thanks to its high workfunction, thus making it possible to create a barrier theoretically allowing the cell to achieve a higher efficiency than those using other noble metals such as gold or palladium …
Graphene/Si Schottky solar cells: a review of recent …
Schottky junction solar cells, fabricated by directly depositing a thin layer of metal or transparency electrode on a moderate doped semiconductor wafer, are receiving much attention in photovoltaic field. 9 Compared to …
High-performance Schottky solar cells using ZrS2 nanobelt networks …
2017), potential for photoemission devices (Pacilé, 2007), photodetectors (Xiong, 2015) and high performance Schottky solar cells (Li, et al., 2011). However, unlike graphene and other TMDs such ...
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